Alan Doolittle received the Most Valuable Contribution Award at the Workshop on Compound Semiconductor Materials and Devices, which was held February 15-18 in Fort Myers, Fla. Dr. Doolittle was presented with this honor for his talk entitled "Metal Modulation Epitaxy - Redefining MBE of III-Nitrides."

In Dr. Doolittle's talk, he presented data showing a factor of 20-40 times higher improvement in GaN hole concentration, as compared to the previously accepted perceived "limit." This accomplishment will potentially lead to higher brightness light emitting diodes, laser diodes used in display and data storage applications, and possibly in the future, high power heterojunction bipolar transistors useful for wideband RF and microwave applications.

An associate professor in the School of Electrical and Computer Engineering, Dr. Doolittle is an associate professor in the microsystems and optics and photonics technical interest areas.