Georgia Institute of Technology is set to play a crucial role in a strategic effort funded by the Defense Advanced Research Project Agency (DARPA) to help bolster America’s national security and global military leadership.  

The project, led by the Texas Institute for Electronics (TIE) at The University of Texas at Austin, represents a total investment of $1.4 billion. The $840 million award from DARPA, announced by TIE in 2024, aims to develop the next generation of high-performing semiconductor microsystems for the Department of Defense (DoD). 

“We are honored to collaborate with TIE and its broader team on this far reaching and strategic program to enable best in class 3D heterogeneous integration (3DHI) processes and technologies in the United States,” said Muhannad S. Bakir, the Dan Fielder Professor in the School of Electrical and Computer Engineering and director of the 3D Systems Packaging Research Center, who is heading the project for Georgia Tech. 

3DHI is a semiconductor manufacturing process that incorporates different materials and components into microsystems with precision assembly. The use of 3DHI allows for the creation of high-performance, compact, and energy-efficient systems. 

The investment is part of DARPA’s Next Generation Microelectronics Manufacturing (NGMM) Program comprised of 32 defense electronics and leading commercial semiconductor companies and 18 nationally recognized academic institutions.

Under the agreement, TIE will establish a national open-access R&D and prototyping fabrication facility. The facility will enable the DoD to create higher performance, lower power, lightweight, and compact defense systems. The advancements are expected to have wide-ranging applications, including radar, satellite imaging, and unmanned aerial vehicles.  

Georgia Tech will provide a wide range of expertise in 3DHI including design, fabrication and assembly processes, and characterization to support the NGMM national facility.  

Regents' Professor and Morris M. Bryan, Jr. Professor Suresh K. Sitaraman in the George W. Woodruff School of Mechanical Engineering will be a key contributor to Georgia Tech’s efforts on the project.

“We are delighted to be partnering with UT/TIE on the establishment of a 3D Heterogeneous Integration Microsystem prototyping  facility,” said Sitaraman. “In addition to advancing fundamental science, this project is a great opportunity for Georgia Tech to demonstrate and integrate our ground-breaking and innovative 3DHI research approaches and technology solutions into TIE’s prototyping facility, and understand the challenges involved when translating lab-scale research work to a large industry-strength fabrication facility.” 

ECE Professors Saibal Mukhopadhyay, Arijit Raychowdhury, Visvesh Sathe, and Shimeng Yu will be working alongside Bakir and Sitaraman. 

A significant portion of the research will be conducted at the Institute for Matter and Systems (IMS), which operates Georgia Tech’s state-of-the-art electronics and nanotechnology core facilities. 

Read the press release from TIE and view the project’s team and partners.