When the 2024 IEEE International Electron Devices Meeting (IEDM) kicks off on Dec. 7 in San Francisco, the influence of the Georgia Tech School of Electrical and Computer Engineering (ECE) will be everywhere.

Just like in years past, it’s another busy one for ECE at the premier semiconductor and electronic device technology conference.

Over the course of the four-day conference, six ECE research groups will present their accepted research at various technical sessions, with Ph.D. students Nashrah Afroze, Sunbin Deng, Sharadindu Gopal Kirtania, Jungyoun Kwak, Junmo Lee, and Eknath Sarkar leading the respective presentations.

Image
Nashrah Afroze

Nashrah Afroze

Image
Kwak

Jungyoun Kwak

Image
Sunbin Deng

Sunbin Deng

Image
Lee

Junmo Lee

Image
Kirtania

Sharadindu Gopal Kirtania

Image
Eknath

Eknath Sarkar

ECE also has significant contributions to research being presented by Georgia Tech School of Mechanical Engineering Ph.D. candidate Mingeun Choi.

Professor Farrokh Ayazi will present his invited research, “Advanced MEMS-Based Wearable Devices for Cardiopulmonary Applications.”

Overall, ECE will have eight research papers at the conference, with contributions from dozens of researchers:

  • BEOL-compatible Non-Volatile Capacitive Synapse with ALD W-doped In2O3 Semiconductor Layer, Junmo Lee, Chengyang Zhang, Minji Shon, James Read, Sunbin Deng, Omkar Phadke, Prasanna Venkatesan Ravindran, Mengkun Tian, Yuan-Chun Luo, Tae-Hyeon Kim, Asif Khan, Suman Datta, Shimeng Yu
  • Fast Prediction of Spatio-Temporal Temperature Profiles in FinFET Arrays via Numerical and Machine-Learning Approaches, Mingeun Choi, Rinku Dutta, Priyabrata Saha, Mayur Pratap Singh, Saibal Mukhopadhyay, Suman Datta, Satish Kumar
Image
Choi

Mingeun Choi

  • Bias Temperature Instability Analysis of Oxide Power Transistors for BEOL On-chip Voltage Converter in Thermally-Constrained H3D Systems, Jungyoun Kwak, Jaewon Shin, Sunbin Deng, Gyujun Jeong, Janak Sharda, Suman Datta, Shimeng Yu
  • Amorphous Indium Oxide Channel FeFETs with Write Voltage of 0.9V and Endurance >10^12 for Refresh-free 1T-1FeFET embedded Memory, Sharadindu Gopal Kirtania, Omkar Phadke, Eknath Sarker, Khandker Akif Aabrar, Dyutimoy Chakraborty, Faaiq Waqar, Shin Jaewon, Tanvir Pantha, Sourav Datta, Asif Khan, Shimeng Yu, Suman Datta
  • Boosted Performance and Enhanced Reliability of BEOL-Compatible Dual-Gate Oxide Power Transistors for On-Chip DC-DC Voltage Conversion, Sunbin Deng, Jaewon Shin, Chengyang Zhang, Hyeonwoo Park,Omkar Phadke, Jungyoun Kwak, Shimeng Yu, Suman Datta
  • First Demonstration of W-doped In2O3 Gate-All-Around (GAA) Nanosheet FET with Improved Performance and Record Threshold Voltage Stability, Eknath Sarkar, Chengyang Zhang, Dyutimoy Chakraborty, Faaiq G Waqar, Sharadindugopal Kirtania, Khandker Akif Aabrar, Hyeonwoo Park, Jaewon Shin, Mengkun Tian, Asif Khan, Shimeng Yu, Suman Datta
  • Self-Healing Ferroelectric Capacitors with ~1000x Endurance Improvement at High Temperatures (85–125˚C), Nashrah Afroze, Andrea Padovani, Jihoon Choi, Priyankka Gundlapudi Ravikumar, Yu-Hsin Kuo, Chengyang Zhang, Taeyoung Song, Mengkun Tian, Eknath Sarkar, Manifa Noor, Prasanna Venkatesan Ravindran, Khandker Akif Aabrar, Bilge Yildiz, Souvik Mahapatra, Andrew Kummel, Kyeongjae Cho, Shimeng Yu, Suman Datta, Jun Hee Lee, Luca Larcher, Gaurav Thareja, Asif Khan
  • Advanced MEMS-Based Wearable Devices for Cardiopulmonary Applications, Farrokh Ayazi, Xinyu Jiang, Brian Sang

ECE faculty and researchers are also credited on several other papers being presented at the conference from other top research institutions.

“It is an honor to have so much of our research and expertise featured at this year’s IEDM,” Steve W. Chaddick School Chair Arijit Raychowdhury said. “We take pride in being one of the leaders in device and semiconductor research, and our inclusion alongside other experts in the field inspires us to continue pushing boundaries.”

Along with the research, ECE faculty will serve in a number of leadership and education roles.

Professor Muhannad Bakir will teach a short course in the “Technology Innovations Shaping the Roadmap in the Era of AI” session titled, “The System Revolution enabled by 2.5D and 3D Technologies.”

Raychowhury is a panelist for the panel, “IEDM at 70: From Semiconductor to Era-Defining Computing Technology.” In this discussion, he along with other experts in the field will look at the future of computing as power increases on an unsustainable curve and uneconomical outcome, and what solutions are needed to ensure the golden age of AI isn’t short-lived but is prosperous and beneficial to society.

Professor Azad Naeemi has multiple roles at the upcoming conference. He’s serving on the Reliability of Systems and Devices technical committee. Additionally, he’s the session co-chair for “Reliability Of Systems and Devices - RSD | Emerging Devices: Security Applications and Reliability.”

Finally, professor Shimeng Yu is on the Memory Technology technical committee.

The conference runs from Dec. 7 – 11. For more information about events and research, click here.

Related Content

Sneak Peak: ECE Projects at Fall 2024 Senior Capstone Design

ECE seniors will showcase their innovative, real-world solutions tackling a range of problems.

Georgia Tech Joins Apple’s New Silicon Initiative

Georgia Tech electrical and computer engineering students will now benefit from an expanded tapeout-to-silicon curriculum and have access to Apple engineers to better prepare for a career in hardware engineering.