Uppili Raghunathan received the 2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Best Student Paper Award. Held Sept. 30-Oct.4 in Bordeaux, France, the IEEE BCTM is the premier international forum for the presentation of advances in bipolar technology, devices, and circuits. 

Raghunathan's paper, entitled "TCAD Modeling of Accumulated Damage During Time-Dependent Mixed-Mode Stress," and coauthored with Partha S. Chakraborty, Brian Wier, John D. Cressler, Hiroshi Yasuda, and Philipp Menz, presented a new approach to virtual prediction of device and circuit reliability for SiGe HBT circuits operating under dynamic conditions. Raghunathan's work represents an important first step in something long desired by industry: the ability to predict, with confidence of the simulated fidelity, the end-of-life characteristics of complex circuits whose dynamic load lines swing through multiple domains of different stress damage mechanisms. This work is supported by SRC and Texas Instruments. 

Raghunathan is a Ph.D. student in the Georgia Tech School of Electrical and Computer Engineering and is advised by Cressler, who holds the Schlumberger Chair in Electronics.