Michael Moseley, a Ph.D. student in the School of Electrical and Computer Engineering (ECE), was named the winner of the Best Student Oral Presentation Award for the 2009 North American Molecular Beam Epitaxy Conference.

Mr. Moseley received this award at the 2010 North American MBE Conference, which was held in Breckenridge, Colo. September 26-29. His advisor is Alan Doolittle, an associate professor in ECE.

Mr. Moseley's presentation was entitled "Deeply degenerate p-GaN grown by metal-modulated epitaxy." His work involves a method of growing GaN with hole concentrations as high as 7.9e19 cm-3 or equivalently approximately 40 times higher than the previously perceived limit. This advance makes practical tunnel junctions to be used in advanced solar cells and could possibly improve the performance of light emitters such as LEDs and lasers.

Two more of Dr. Doolittle's ECE Ph.D. students, Jordan Greenlee and Laws Calley, were also chosen for the 2010 Best Student Abstract Award, which was presented at the same conference.