Official Job Title
Associate Professor
Telephone
Office Building
Klaus
Office Room Number
3314
Technical Interest Group(s)
Biography

Jeffrey Alan Davis received his B.E.E., M.S.E.E., and Ph.D. from Georgia Tech in 1993, 1997, and 1999, respectively. Dr. Davis has co-authored over 75 refereed journal, conference, and workshop publications, and his papers have been referenced over 2500 times by researchers from around the world [scholar.google.com]. He also co-authored and co-edited a book entitled Interconnect Technology and Design for Gigascale Integration, which has recently been translated into Chinese and republished in 2010. His current research interests are exploring the low-frequency electrical properties of nanocomposite materials, and in 2012-2013 he was awarded the Georgia Tech Fund for Innovation in Research and Education (GT-FIRE) for this work. The application of this technology is to develop solid-state capacitors that have extremely high-energy density for electrical energy storage. He also explores novel ways to completely replace conventional electrochemical batteries with capacitive energy storage in a variety of everyday products.

Education
  • Ph.D., Electrical and Computer Engineering, Georgia Institute of Technology, 1999
  • M.S., Electrical and Computer Engineering, Georgia Institute of Technology, 1997
  • B.S., Electrical Engineering, Georgia Institute of Technology, 1993
Research Interests

Davis is currently involved in simulation and fabrication of solid-state nanocomposite materials that have both high permittivities and high-breakdown field strengths. The application of this technology is to develop solid-state capacitors that have extremely high-energy density for electrical energy storage. He also explores novel ways to completely replace conventional electrochemical batteries with capacitive energy storage in a variety of everyday products.

Teaching Interests

Davis' teaching is centered on undergraduate and graduate courses in electrical and computer engineering, emphasizing circuit design, nanotechnology, and embedded systems. He aims to provide foundational knowledge and practical skills that prepare students for advanced study and professional practice. His instruction integrates theoretical concepts with applied problem-solving, supporting student engagement and development in both classroom and laboratory settings.

Distinctions & Awards
  • 2001 NSF CAREER Award
  • 2002-2003 Outstanding Junior Faculty Award in ECE
  • 2004-2005 Class of 1940 W. Roane Beard Outstanding Teacher Award
  • 2006 Education Partnership Award
  • 2007, 2013 ECE Outreach Award
  • 2007 HKN Richard M. Bass Outstanding Teaching Award
  • 2009 S.C. Sun Best Student Paper Award at IITC
  • 2011,2013 Class of 1934 Course Survey Teaching Effectiveness Award
  • 2012-2013 Awardee of the Georgia Tech Fund for Innovation in Research and Education
Publications
  • Z. Mousavi Karimi and J. A. Davis, "Enhanced Permittivity in PEALD Al2O3/TiO2 Nanolaminates: Investigating Maxwell-Wagner and Interfacial Polarization in IDEs," 2025 IEEE 37th International Conference on Microelectronic Test Structures (ICMTS), San Antonio, TX, USA, 2025, pp. 1-4.
  • R. Chapa, C. Wu, J. Sounder, N. Mahesh, C. Hudson, W. Redford, H. Vummadi, J. Li, and J.A. Davis, “Sargassum Macroalgae as a Primary Feedstock for Hermetia illucens Larvae: A Sustainable Approach to Biomass Conversion for Small Farmers” Presented at the International Materials Research Conference, Cancun Mexico, Aug. 18-24, 2024.
  • Z. Mousavi Karimi, J.A. Davis, “Current Density-Voltage (J-V) Characterization of Monolithic Nanolaminate Capacitors,” Material Proceedings 2023, Vol. 14, Issue 1, p. 54.
  • Z. Mousavi Karimi and J.A. Davis, “Interfacial Permittivity Characterization of Heterogeneous Dielectric Bi-Layers,” IEEE Transactions on Electron Devices, vol. 69, No. 4, pp. 1950-1955, April 2022.
  • Z. Mousavi Karimi and J.A. Davis, “Permittivity Characterization of Dielectric Interfaces Using High-Density In-Plane Capacitors,” IEEE Transactions on Electron Devices, vol. 68, pp. 4033-4038, Aug. 2021.