Dr. Asif I. Khan is an Associate Professor in the School of Electrical and Computer Engineering at the Georgia Institute of Technology, with a courtesy appointment in the School of Materials Science and Engineering. His research focuses on semiconductor materials and devices for advanced memory, logic, and AI hardware, with emphasis on ferroelectric and oxide materials and AI-accelerated materials-to-technology translation.
Dr. Khan's early work included the first experimental demonstration of ferroelectric negative capacitance, and his group's subsequent research on hafnia-based ferroelectrics has informed emerging directions in logic, memory, and storage technologies.
He currently serves as Editor-in-Chief of the IEEE Journal on Exploratory Solid-State Computational Devices and Circuits (J-xCDC) and as an Editor of IEEE Electron Device Letters. He has served on the technical program committees of IEDM, the VLSI Technology Symposium, DAC, and DRC, and has co-organized multiple IEEE and MRS Fall and Spring Meeting symposia. His honors include the Intel Rising Star Award (2020), NSF CAREER Award (2021), DARPA Young Faculty Award (2021), Georgia Tech Outstanding Junior Faculty Award (2022), Provost's Emerging Leaders recognition (2024), and selection to the National Academy of Engineering Frontiers of Engineering Symposium (2025).
Beyond research and publishing, Dr. Khan is deeply committed to mentorship and public engagement. He actively engages K–12 and community college audiences and serves as an independent technical advisor to startups and venture funds on semiconductor technology, reliability, and investment strategy.
- Ph.D., Electrical Engineering and Computer Sciences, University of California, Berkeley, 2015
- B.S., Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology (BUET), 2007
Ferroelectric and emerging materials for or advanced memory, logic, and AI hardware, and AI-accelerated materials-to-technology translation.
Introduction to Semiconductor Materials and Devices, Introduction to Quantum Computing Devices, AI/ML for Semiconductor Manufacturing.
- Selection to the National Academy of Engineering Frontiers of Engineering Symposium (2025)
- Selection to Georgia Tech Provost's Emerging Leaders Program (2024)
- DARPA Young Faculty Award (2021)
- NSF CAREER Award (2021)
- Intel Rising Star Award (2020)
- A. I. Khan, A. Keshavarzi, and S. Datta. “The future of ferroelectric field-effect transistor technology.”Nature Electronics, vol. 3, pp. 588–597, 2020. https://doi.org/10.1038/s41928-020-00492-7
- D. Das, H. Park, Z. Wang, C. Zhang, P. Venkatesan Ravindran, C. Park, N. Afroze, P.-K. Hsu, M. Tian, H. Chen, W. Chern, S. Lim, K. Kim, K. Kim, W. Kim, D. Ha, S. Yu, S. Datta, & A. Khan, “Trap Experimental demonstration and modeling of a ferroelectric gate stack with a tunnel dielectric insert for NAND applications.” The 2023 IEEE International Electron Devices Meeting (IEDM 2023), pages 12.4.1–12.4.4 (2023). https://doi.org/10.1109/iedm45741.2023.10413697
- P. Venkatesan, L. Fernandes, S. Kang, P. Ravikumar, T. Song, C. Park, D. Das, K. H. P. Kim, K. Seo, K. Kim, K. Ni, A. Padovani, M. Pakala, L. Larcher, G. Thareja, W. Kim, D. Ha, and A. I. Khan, "Pushing the limits of NAND technology scaling with ferroelectrics, ".MRS Bulletin, vol. 50, pp. 1094–1107, 2025. https://doi.org/10.1557/s43577-025-00991-y
- P. Ravikumar, P. Venkatesan, C. Park, N. Afroze, M. Tian, W. Chern, S. Datta, S. Yu, S. Mahapatra, and A. I. Khan, “The First Switch Effect in Ferroelectric Field-Effect Transistors,”IEEE Transactions on Device and Materials Reliability, vol, vol. 25, pp. 365–370, 2025. https://doi.org/10.1109/tdmr.2025.3576042
- N. Afroze, H. Fahrvandi, G. Ren, P. Kumar, C. Nelson, S. Lombardo, M. Tian, P.-C. Lee, J. Chen, M. Noor, K. Chae, S. Kang, P. V. Ravindran, M. Bergschneider, G. Y. Jung, P. Omprakash, G. K. Ligonde, N. Tasneem, D. Triyoso, S. Consiglio, K. Tapily, R. Clark, G. Leusink, J. Ravichandran, S. Yu, A. Lupini, A. Kummel, K. Cho, D.-H. Choe, N. Bassiri-Gharb, J. Kacher, R. Mishra, J. H. Lee, and A. I. Khan, “Sub-nm2 ferroelectric domains via charged 180 degree walls in ZrO2,” arXiv, 2025. https://arxiv.org/abs/2507.18920
- P. Venkatesan, C. Li, A. Padovani, Z. Wang, H. Jayasankar, P. Ravikumar, M. Nabian, K. Tangsali, S. Nidhan, J. Vamaraju, R. Cherukuri, P. Mathur, E. Piccinni, R. Foiera, R. Gaffetanu, K. A. Aabrar, S. Datta, S. Kalidindi, L. Larcher, A. Khan, Y. Wang, & G. Thareja. “VLPred: Accelerated Endurance Prediction Platform Enabled by AI Surrogates.” The 2025 IEEE International Electron Devices Meeting (IEDM 2025). https://doi.org/10.1109/iedm50572.2025.11353672