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Photo file: 
Full name: 
Doug Yoder
Job title: 
Associate Professor
Technical Interest Groups: Optics and Photonics, Nanotechnology
Email address: 
Work phone: 
BH 219

P. D. Yoder received the B.S.E.E. degree from Cornell University, Ithaca, NY in 1989, and the M.S. and Ph.D. degrees from the University of Illinois, Urbana-Champaign, in 1991 and 1993, respectively. Upon graduation, he accepted a research position with the Swiss Federal Institute of Technology in Zurich, Switzerland. He subsequently worked as a Member of Technical Staff at Bell Laboratories in Murray Hill, New Jersey, and then with its micro-/opto-electronics spin-off, Agere Systems. Dr. Yoder joined the faculty of Georgia Tech in Fall 2003.

Research interests: 
  • High-speed photodetectors and electro-absorption modulators
  • RF testing, modeling and simulation
  • Monte Carlo charge transport simulation
  • Semiconductor device physics
  • Member of Tau Beta Pi
  • Member of Eta Kappa Nu
  • Recipient of Hertz Foundation Graduate Research Grant (University of Illinois, 1990)
  • Recipient of Unisys Scholarship (Cornell, 1988)
  • Recipient of MITRE Corporation Scholarship (Cornell, 1986)

P. D. Yoder and E. J. Flynn, "Quasi-unipolar InGaAs/InP photodetection for enhanced optical saturation power and maximal bandwidth", Applied Physics Letters, Vol. 91, pp. 062114-062116, 2007.

N. Z. Butt, P. D. Yoder and M. A. Alam, "Soft Error Trends and New Physical Model for Ionizaing Dose Effects in Double Gate Z-RAM Cell", IEEE Transactions on Nuclear Science, Vol. 54, pp. 2363-2370, 2007.

S.-C. Shen, Y. Zhang, D. Yoo, J.-B. Limb, J.-H. Ryou, P. D. Yoder and R. D. Dupuis, "Performance of Deep Ultraviolet GaN Avalanche Photodiodes Grown by MOCVD", IEEE Photonics Technology Letters, Vol. 19, pp. 1744-1746, 2007.

P. D. Yoder, "Bandwidth and Charge Balancing of the Partially Depleted Absorber Photodiode", IEEE Journal of Quantum Electronics, Vol. 43, pp. 992-997, 2007.

P. D. Yoder and E. J. Flynn, "Linear Theory of the Quasi-Unipolar Photodiode", IEEE Journal of Lightwave Technology, Vol. 24, No. 4, pp. 1937-1945, April 2006.

P. D. Yoder, M. I. Vexler, A. F. Shulekin, N. Asli, S. V. Gastev, I. V. Grekhov, P. Seegebrecht, S. E. Tyaginov, H. Zimmermann, "Luminescence Spectra of an Al/SiO2/p-Si Tunnel Metal Oxide Semiconductor Structure", Journal of Applied Physics, vol. 98, pp. 83511-83523, Oct. 15 2005.

Last revised August 31, 2020