Abdallah Ougazzaden is a professor at the Georgia Institute of Technology (GIT)/School of Electrical and Computer Engineering; president of Georgia Tech-Europe (the European Campus of GIT in France), and co-founder and co-president of Institut Lafayette (Lafayette Institute), a platform of innovation and technology transfer. He was a leader in creating the Joint International Research Lab between GIT and the Centre National de la Recherche Scientifique (CNRS) and then served as its director for three terms.
Dr. Ougazzaden worked in R&D as a senior researcher and group leader at CNET/France Telecom (France) for more than eight years and one year at Optoplus/Alcatel (France) as optoelectronic materials group manager. In 1999, he joined Bell-Labs at Lucent Technologies (USA) as epitaxy and materials characterization manager for Optical Fiber Communication. He kept this position with Agere Systems (USA), and then he worked as R&D and Fab Manager at TriQuint Semiconductor (USA).
Dr. Ougazzaden joined Georgia Institute of Technology in 2005. His current research activity is in the field of wide bandgap semiconductors, 2D materials, and related devices for optoelectronic applications. He has authored more than 450 international scientific papers and communications and holds 26 patents. He contributed to the development of the first laser semiconductor at 1.3-micron for fiber telecommunication in France and its transfer to Alcatel.
A full list of Dr. Ougazzaden's publications may be found at https://scholar.google.fr/citations?user=fTnKhOYAAAAJ&hl=fr">here.
- HDR (Accreditation to Direct Research), University of Paris VII, 1996
- Doctorate, Materials Science & Engineering, University of Paris VII, 1990
- Master’s, Materials Science, University of Paris VII, 1986
Professor Ougazzaden’s research focuses on semiconductor materials and photonic devices, particularly in epitaxial growth and integration of III‑V semiconductors on silicon substrates. His work involves developing advanced materials for optoelectronic applications, including lasers and photonic integrated circuits. The research aims to enhance the performance and integration of photonic devices for communication and sensing technologies.
Professor Ougazzaden’s teaching interests include semiconductor materials and devices, optoelectronics, and photonics at undergraduate and graduate levels. He focuses on providing foundational knowledge in electronic and photonic materials, emphasizing the integration of theory and practical applications. Professor Ougazzaden engages students in coursework related to the physics, growth, and characterization of advanced semiconductor technologies.
- 2019 recipient of “La Légion d’Honneur,” the highest decoration in France on behalf of the French President
- Member of National Academy of Metz since 2017
- 2015 recipient of the first international Stellab Award from PSA Peugeot Citroen
- Medale of City of Metz, France, 2014
- 2013 Steven A. Denning Faculty Award for Global Engagement, Georgia Tech
- CNET/France Telecom Award, 1990
- Member of Organization Committee of European Workshop, MOVPE
- Member of the International Advisory Committee, International Conference, MOVPE
- Chair and organiser of the International Conference MOVPE 2008, Metz, France
- Member of steering committee and expert on nanotechnology for the Parliamentary Office for Scientific and Technological Choices (OPECST)
- Member Expert in French Research AgencyMember of steering committee and expert on nanotechnology for the Parliamentary Office for Scientific and Technological Choices (OPECST)
- Member Expert in French Research Agency
- J. Duraz et al., On the importance of Ni–Au–Ga interdiffusion…, Journal of Applied Physics 139(2), 2026
- J.P. Salvestrini et al., III‑Nitride MEMS Drum Resonators on Flexible Metal Substrates, 2025
- Perepeliuc et al., Layer transferred UV emitting hBN/AlGaN heterostructures, Applied Physics Letters 126(10), 2025
- S. Sundaram et al., MOVPE growth of hexagonal boron nitride and its heterostructures, LEDMA XXIX, 2025
- Kassem et al., III‑Nitride MEMS drum resonators on flexible metal substrates, Microsystems & Nanoengineering11(1), 197, 2025