Plasma Processing of Electronic Materials and Devices
(3-0-0-3)
CMPE Degree: This course is Not Applicable for the CMPE degree.
EE Degree: This course is Not Applicable for the EE degree.
Lab Hours: 0 supervised lab hours and 0 unsupervised lab hours.
Technical Interest Group(s) / Course Type(s): Courses for non-ECE majors, Nanotechnology
Course Coordinator:
Prerequisites: None.
Catalog Description
Fundamental physics, chemistry, chemical engineering and electricalengineering principles inherent in plasma processes. Includes etching,
deposition, diagnostic methods, and control schemes. Cross-listed with
CHE 6759.
Textbook(s)
Plasma Etching: An IntroductionCourse Outcomes
Not Applicable
Strategic Performance Indicators (SPIs)
Not Applicable
Topical Outline
Introduction (1 week)
-- need for plasma etching/deposition
-- goals
Basic plasma physics/chemistry (2 weeks)
-- kinetic molecular theory
-- electron energy distribution
-- ion energy distribution
Etch/Deposition reactor configurations (1 week)
-- barrel, parallel plate, high density
Etching/Deposition parameters (2 weeks)
-- power, pressure, frequency
Modeling and simulation (1 week)
-- chemical, physical, mathematical, profile development
Process monitoring and endpoint detection (2 weeks)
-- mass spectrometry, optical emission
Process control (1 week)
-- strategies
Etching specific materials (1 week)
-- insulators, semiconductors, conductors
Deposition of specific materials (1 week)
-- insulators, semiconductors, conductors
Damage issues (1 week)
-- radiation, particles
Safety & environmental issues, future plasma directions (1 week)
Exams & project presentations (1 week)