ECE Course Syllabus

ECE4415 Course Syllabus


RF Engineering I (3-0-3)

ECE3025 [min C] and ECE3050/3400


Catalog Description
Fundamentals of RF engineering. Components at high frequencies,device modeling, amplifiers,lumped-element and microstrip impedance transformation networks, S-parameter based design of RF and microwave amplifiers.

Guillermo Gonzalez, Microwave Transistor Amplifiers Analysis and Design (2nd edition), Prentice Hall, 1997. ISBN 0132543354, ISBN 9780132543354 (required)

Topical Outline
  RF Engineering
  Systems and Circuits
  RF Amplifiers and Oscillators
  Amplifier design and Construction

Circuit Fundamentals
  Active and Passive Devices
  Sources and Available Power
  Quality Factor Q
  Resonant Circuits
  Bandwidth and Attenuation
  Practical Components

Amplifier Fundamentals
  Configuration of Amplifiers and Oscillators
  Power Gains
  Stability and Existence of Power Gains
  Maximum Gain
  Two-Port Networks
  Fundamentals of Computer-Aided Analysis

Impedance Transformation Networks
  Lossless Networks
  Graphical Design of L-Networks
  T- and PI-Networks
  Design for Phase Shift
  Resistive Attenuators
  Balanced Networks

Introduction to Scattering Parameters
  Transmission Lines and Reflections
  Physical Meanings of S-Parameters
  Calculation of S-Parameters
  Measurement of S-Parameters
  Stability Criteria for S-Parameters
  Power Gains in Terms of S-Parameters
  Gain Circles for the Unilateral Case
  Gain Circle for the Non-Unilateral Case

Design Using Scattering Parameters
  Optimum Terminations in Terms of S-Parameters
  Unilateral Design
  Bilateral Design

Immittance Transformation Networks Using Transmission Lines
  Microstrip and Stripline
  Hybrid Lumped-Element Microstrip Networks
  All-Microstrip Network Design
  Quarter-Wave and RElated Transformers
  Cascaded Networks

Microwave Amplifers
  Microwave Devices
  Microstrip Discontinuities
  Amplifier Design