Alan Doolittle, Laws Calley, Jordan Greenlee (l-r) won the Best Student Abstract Award at NAMBE 2010. Michael Moseley (2nd from r) won the Best Oral Presentation Award at the conference.

Associate Professor W. Alan Doolittle and his Ph.D. students Jordan Greenlee and Laws Calley, all of the School of Electrical and Computer Engineering at Georgia Tech, have been chosen for the honor of Best Student Abstract for the 27th North American American Molecular Beam Epitaxy Conference. The team presented their paper at the conference, held September 26-29, 2010 in Breckenridge, Colo.

Entitled "MBE Growth of Metal Oxides for Complementary Memristive Applications," this paper details the manufacturing methods for a new electronic device that demonstrates for the first time both complementary (both n-type and p-type conduction) memristors, a technology similar in nature to CMOS silicon and the first demonstration of analog memristors. These advances may be useful in next generation neuromorphic computers, which are computing technologies that mimic mammal brain functionality. In addition, Georgia Tech recently filed a patent on this technology.

This was not the only award that Dr. Doolittle's group received at this conference. Michael Moseley also received the NAMBE Best Student Oral Presentation Award for both 2009 and 2010.