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Ph.D. Dissertation Defense - Mingyo Park

Event Details

Thursday, August 18, 2022

9:00am - 11:00am

Location: 
https://teams.microsoft.com/l/meetup-join/19%3ameeting_ZjcyYjhlOGYtMzM2NC00N2NmLWI1MTgtZGQxMmM5YzIyNzEx%40thread.v2/0?context=%7b%22Tid%22%3a%22482198bb-ae7b-4b25-8b7a-6d7f32faa083%22%2c%22Oid%22%3a%2255304a23-f2d1-43e9-bb82-f0514463cea4%22%7d

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Event Details

TitleAcoustic Resonators based on Epitaxial AlN/AlScN Ultra-thin Piezoelectric Films

Committee:

Dr. Azadeh Ansari, ECE, Chair, Advisor

Dr. John Cressler, ECE

Dr. Farrokh Ayazi, ECE

Dr. Oliver Brand, ECE

Dr. Sukwon Choi, PSU

Abstract: This work is focused on the design, fabrication, and characterization of MEMS acoustic resonators based on Epitaxial AlN/AlScN thin piezoelectric films. This work demonstrates super high frequency(SHF) lamb, surface acoustic wave(SAW), and thin-film bulk acoustic wave resonators (FBAR) based on single-crystal orientation Alumium Scandium Nitride (AlScN) thin films grown on silicon substrates by molecular beam epitaxy (MBE). In order to target emerging wireless communication standards, such as 4G LTE/5G, the effects of film thickness on FWHM and Sc concentration on piezocoefficient are studied based on the requirements of the resonators/filters for operation at the SHF range. Furthermore, this work reports on the generation and frequency tuning of phononic(mechanical) frequency combs in an integrated standalone AlN-on-Si flexural resonator via non-degenerate parametric pumping. Cubic nonlinearity due to the geometrical Duffing effect is studied and induced various parametrically-excited regimes are presented along with stress-induced mode coupling in Aluminum Nitride (AlN) circular MEM resonators.

Last revised August 9, 2022